Comparative study of semiconductor power losses between CSI-based STATCOM and VSI-based STATCOM, both used for unbalance compensation

Protection and Control of Modern Power Systems

Table 3 Expressions of Peak, RMS, and AVG value of IGBT and antiparallel diode current and voltage (CSI cell)

	Peak current expression	RMS current expression	AVG current expression	DC Voltage expression
IGBT	\( {\mathrm{I}}_{\mathrm{DC}.\mathrm{r}\acute{\mathrm{e}}\mathrm{f}} \)	\( \frac{{\mathrm{I}}_{\mathrm{DC}.\mathrm{r}\acute{\mathrm{e}}\mathrm{f}}}{\sqrt{3}} \)	\( \frac{{\mathrm{I}}_{\mathrm{DC}.\mathrm{r}\acute{\mathrm{e}}\mathrm{f}}}{3} \)	\( \frac{\sqrt{2}\bullet {\mathrm{V}}_{\mathrm{C}}}{3} \)
Series diode	\( {\mathrm{I}}_{\mathrm{DC}.\mathrm{r}\acute{\mathrm{e}}\mathrm{f}} \)	\( \frac{{\mathrm{I}}_{\mathrm{DC}.\mathrm{r}\acute{\mathrm{e}}\mathrm{f}}}{\sqrt{3}} \)	\( \frac{{\mathrm{I}}_{\mathrm{DC}.\mathrm{r}\acute{\mathrm{e}}\mathrm{f}}}{3} \)	\( \frac{2\cdotp \sqrt{2}\bullet {\mathrm{V}}_{\mathrm{C}}}{3} \)