Table 4 STATCOM Semiconductors characteristics

Transistor (IGBT module)

V_{CE. sat}

3,2 V

r_{on. IGBT}

2,94mΩ

V_{CE. r}

4500 V

I_C.r

1200 A

(a_on + a_off)

1,2. 10–6

(b_on + b_off)

6,1. 10–3

(c_on + c_off)

1,08

Anti-parallel Diode (IGBT module)

V_F

3,25 V

r_{on. D}

2,98mΩ

V_{RRM. r}

4500 V

I_FAV.r

1200A

a_rec

-5,25. 10–7

b_rec

2,61. 10–3

c_rec

375. 10–3

Series Diode (Diode module)

V_F

0,82 V

r_{on. D}

0,858mΩ

Q_rr

700μC

V_r

100 V

V_{RRM. r}

2200 V

I_FAV.r

1370 A